Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip.

Raman microlasers form on-chip versatile light sources by optical pumping, enabling numerical applications ranging from telecommunications to biological detection. Stimulated Raman scattering (SRS) lasing has been demonstrated in optical microresonators, leveraging high Q factors and small mode volume to generate downconverted photons based on the interaction of light with the Stokes vibrational mode. Unlike redshifted SRS, stimulated anti-Stokes Raman scattering (SARS) further involves the interplay between the pump photon and the SRS photon to generate an upconverted photon, depending on a highly efficient SRS signal as an essential prerequisite. Therefore, achieving SARS in microresonators is challenging due to the low lasing efficiencies of integrated Raman lasers caused by intrinsically low Raman gain. In this work, high-Q whispering gallery microresonators were fabricated by femtosecond laser photolithography assisted chemo-mechanical etching on thin-film lithium niobate (TFLN), which is a strong Raman-gain photonic platform. The high Q factor reached 4.42 × 106, which dramatically increased the circulating light intensity within a small volume. And a strong Stokes vibrational frequency of 264 cm-1 of lithium niobate was selectively excited, leading to a highly efficient SRS lasing signal with a conversion efficiency of 40.6%. And the threshold for SRS was only 0.33 mW, which is about half the best record previously reported on a TFLN platform. The combination of high Q factors, a small cavity size of 120 µm, and the excitation of a strong Raman mode allowed the formation of SARS lasing with only a 0.46 mW pump threshold.

Ultra-high Q lithium niobate microring monolithically fabricated by photolithography assisted chemo-mechanical etching.

As one of the element photonic structures, the state-of-the-art thin-film lithium niobate (TFLN) microrings reach an intrinsic quality (Q) factor higher than 107. However, it is difficult to maintain such high-Q factors when monolithically integrated with bus waveguides. Here, a relatively narrow gap of an ultra-high Q monolithically integrated microring is achieved with 3.8 µm, and a high temperature annealing is carried out to improve the loaded (intrinsic) Q factor with 4.29 × 106 (4.04 × 107), leading to an ultra-low propagation loss of less than 1 dB/m, which is approximately 3 times better than the best values previously reported in ion-slicing TFLN platform.

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27†dB internal net gain.

A photonic integrated waveguide amplifier fabricated on erbium-ytterbium (Er-Yb) codoped thin-film lithium niobate (TFLN) has been investigated in this work. A small-signal internal net gain of 27 dB is achieved at a signal wavelength of 1532 nm in the fabricated Er-Yb TFLN waveguide amplifier pumped by a diode laser at ≈980 nm. Experimental characterizations reveal the suitability of waveguide fabrication by the photolithography-assisted chemo-mechanical etching (PLACE) technique and also the gain in an Yb-sensitized-Er material. The demonstrated high-gain chip-scale TFLN amplifier is promising for interfacing with established lithium niobate integrated devices, greatly extending the spectrum of TFLN photonic applications.

On-chip ultra-narrow-linewidth single-mode microlaser on lithium niobate on insulator.

We report an on-chip single-mode microlaser with a low threshold fabricated on erbium doped lithium-niobate-on-insulator (LNOI). The single-mode laser emission at 1550.5 nm wavelength is generated in a coupled microdisk via the inverse Vernier effect at room temperature, when pumping the resonator at 977.7 nm wavelength. A threshold pump power as low as 200 µW is demonstrated due to the high quality factor above 106. Moreover, the measured linewidth of the microlaser reaches 348 kHz without discounting the broadening caused by the utilization of optical amplifiers, which is, to our knowledge, the best result in LNOI microlasers. Such a single-mode microlaser lithographically fabricated on chip is in high demand by the photonics community.

Efficient light coupling between an ultra-low loss lithium niobate waveguide and an adiabatically tapered single mode optical fiber.

A lithium niobate on an insulator ridge waveguide allows constructing high-density photonic integrated circuits thanks to its small bending radius offered by the high index contrast. Meanwhile, the significant mode-field mismatch between an optical fiber and the single-mode lithium niobate waveguide leads to low coupling efficiencies. Here, we demonstrate, both numerically and experimentally, that the problem can be solved with a tapered single mode fiber of an optimized mode field profile. Numerical simulation shows that the minimum coupling losses for the TE and TM mode are 0.32 dB and 0.86 dB, respectively. Experimentally, though without anti-reflection coating, the measured coupling losses for TE and TM mode are 1.32 dB and 1.88 dB, respectively. Our technique paves a way for a broad range of on-chip lithium niobate applications.

Fabrication of Crystalline Microresonators of High Quality Factors with a Controllable Wedge Angle on Lithium Niobate on Insulator.

We report the fabrication of crystalline microresonators of high quality (Q) factors with a controllable wedge angle on lithium niobate on insulator (LNOI). Our technique relies on a femtosecond laser assisted chemo-mechanical polish, which allows us to achieve ultrahigh surface smoothness as critically demanded by high Q microresonator applications. We show that by refining the polish parameters, Q factors as high as 4.7 × 107 can be obtained and the wedge angle of the LNOI can be continuously tuned from 9° to 51°.